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Updated: Jun 30, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Published on: November 1, 2013

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二元和三元逻辑内存使用纳米板反场效应晶体管与三门结构

Jongseong Han1, Jaemin Son2, Seungho Ryu1

  • 1Department of Semiconductor Systems Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea.

Scientific reports
|March 19, 2024
PubMed
概括

本研究展示了使用纳米板反场效应晶体管 (FBFET) 的二元和三元逻辑内存操作. 这些FBFET可实现具有数据存储能力的高效逻辑电路,为先进计算铺平了道路.

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