电控全反铁磁道交叉点在上,具有较大的室温磁电阻
Jiacheng Shi1, Sevdenur Arpaci1,2, Victor Lopez-Dominguez1,3
1Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA.
Advanced materials (Deerfield Beach, Fla.)
|March 19, 2024
概括
研究人员开发了用于自旋电子设备的与相容的反铁磁 (AFM) 道连接. 这些接口使电写和阅读的数据在室温使用大型道磁阻 (TMR) 效应.
科学领域:
- 这就是Spintronics.
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
背景情况:
- 抗铁磁 (AFM) 材料为高速,节能的自旋电子设备提供了潜力.
- 当前的AFM设备往往缺乏兼容性,需要外部磁场进行控制.
- 通过道磁阻 (TMR) 进行电读取已经被证明,但不是在与兼容的工艺中.
研究的目的:
- 开发用于自旋电子应用的与相容的反铁磁道连接.
- 为了实现同时在AFM设备中电气写入和读取信息.
- 为了研究非直线AFM道交叉点的TMR效应.
主要方法:
- 制造三端的AFM道结口使用喷雾沉积在.
- 使用非线性反铁磁铁 PtMn 作为电极材料.
- 电气开关和室温TMR效应的实验性表征.
- 第一个原则计算来解释观察到的TMR现象.
主要成果:
- 展示了AFM道连接处的喷雾沉积在上.
- 通过一个大型的室温TMR效应,同时进行电气开关和读取.
- 基于 PtMn3 的设备具有适用于旋转电子应用的特性.
结论:
- 与相容的AFM道连接处具有电气开关和读取是可行的.
- 开发的设备为实际的自旋电子内存和计算铺平了道路.
- 动量解析的自旋依赖道解释了非对线AFM电极中的TMR.
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