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Updated: Jun 30, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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基于全二维材料的超快速非易失性浮动门内存

Hao Wang1,2, Hui Guo1,2,3, Roger Guzman2

  • 1Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.

Advanced materials (Deerfield Beach, Fla.)
|March 19, 2024
PubMed
概括

这项研究介绍了先进的2D材料存储器设备,提供超快的速度和长期数据保留. 这些创新为下一代非易失性存储器和灵活的电子产品铺平了道路.

关键词:
两维材料是二维材料.逻辑大门 逻辑大门超快的非易失性浮动门内存.范德瓦尔斯的异构结构是异构结构.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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