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Updated: Jun 30, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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GeSe 电磁值开关:功能层厚度和设备尺寸的影响

Jiayi Zhao1,2, Zihao Zhao1,2, Zhitang Song1

  • 1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.

Scientific reports
|March 21, 2024
PubMed
概括

为3D相位变换存储器 (3D PCM) 微型化GeSe Ovonic值开关 (OTS) 选择器显示值电压尺度与厚度,但不是设备大小. 电场触发了切换,对于可扩展的内存至关重要.

关键词:
在 GeSe GeSe 的位置上这是一个Ovonic值开关.阶段变化记忆 阶段变化记忆可扩展性 可扩展性选择器选择器选择器门交换场的门交换场是一个值.

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