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在Cu-to-Cu直接与金属被动化层结合时,解开扩散行为

Min Seong Jeong¹, Sang Woo Park¹, Yeon Ju Kim¹

¹Department of Semiconductor Engineering, Seoul National University of Science and Technology, Seoul, Republic of Korea.

Scientific reports

|March 21, 2024

概括

金属被动化层的结晶性显著影响低温铜 (Cu) 混合结合中的扩散行为. 这一发现是推动未来集成系统高密度互连的关键.

科学领域:

材料科学与工程材料科学与工程
半导体设备制造业半导体设备制造业

背景情况:

高密度互连对于先进的集成系统至关重要.
传统的铜结合需要高温 (>400°C),因此需要低温替代品.
探索金属被动化结合,以降低Cu/SiO2混合结合温度.

研究的目的:

研究各种金属被动化层 (Pt,Ti,Ta,Cr) 在低温直接铜结合中的扩散行为.
了解底层的结合机制,并确定影响扩散的关键因素.
为了确定金属被动化层在粘合过程中的结晶性的作用.

主要方法:

使用不同金属被动化层的Cu/SiO2基板进行直接铜结合实验.
在低温粘合条件下对扩散行为的分析.
金属被动化层的表征,重点关注晶度,表面粗度和颗粒大小.
结合后的检查,以将扩散与被动化层特性相关联.

主要成果:

扩散行为偏离了传统的金属-金属结合因素,如表面粗度和粒度大小.
在金属被动化层的结晶性和扩散行为之间观察到强烈的相关性.
尽管结晶度不同,但在Pt和Cr被动化样本中观察到一致的扩散,这突出了其关键作用.

结论:

结晶性是控制低温Cu/SiO2混合键的扩散行为的关键因素,超过其他实验变量.
了解和控制结晶度可以在降低温度下优化结合特性.
这项研究推进了模块对晶圆的结合,为更高度集成的系统铺平了道路.

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