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纳米级通道长度 MoS₂ 垂直场效应晶体管阵列与侧墙源/排水电极

Xionghui Jia^1,2, Zhixuan Cheng^1,2, Yiwen Song^1,3

¹State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.

ACS applied materials & interfaces

|March 21, 2024

概括

本研究介绍了一种使用垂直分布的电极制造二硫化物 (MoS) 场效应晶体管 (FET) 的新制造方法. 这种方法可以实现高密度,低功耗的集成电路,而无需电子束光刻.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
电气工程电气工程

背景情况:

像MoS这样的二维过渡金属二甲基化物 (TMDC) 在场效应晶体管 (FET) 中克服短通道效应具有优势.
现有的100nm以下MoS₂FET的制造方法通常依赖于机械皮材料和电子束光刻 (EBL),限制了集成电路 (IC) 的可扩展性.
对于基于TMDC的FET,需要可扩展的制造技术,以实现高密度和低功耗IC应用.

研究的目的:

设计和制造具有垂直分布的侧墙源和排水电极的MoS₂ FET阵列.
为了展示一个不含EBL的制造工艺,适合晶圆尺度设备阵列.
评估这些垂直MoS₂FET的性能和可靠性,以便在IC中潜在使用.

主要方法:

使用垂直电极设计制造MoS₂ FET阵列,其中通道长度由绝缘层厚度决定.
在低排水源电压下 (V_DS) 启/关比和性能的表征.
在制造的数组中对设备产量和性能一致性的统计分析.

主要成果:

制造的垂直MoS₂FET实现了与纳米级通道的机械剥皮对应物相比的开/关比.
设备在10mV的低V_DS下有效运行,表现出高达1.9 × 10^{7的理想开/关比,表明低功耗应用的潜力.}
没有EBL的制造过程导致FET阵列的设备产量高达87.5%,平均开/关比为1.7 × 10⁶在10mVV_DS.

结论:

开发的垂直电极结构和无EBL制造方法对于生产高密度MoS2FET阵列是有效的.
结果表明,使用TMDC来制造适合ICs的可靠,高性能,低功耗纳米电子设备的可行性.
这种方法为推进高级半导体设备的晶圆尺度集成提供了一个有希望的途径.

关键词:

3D建筑的3D架构在 FET 阵列中.在MoS2 FET中,纳米级的通道长度是纳米级的.垂直的FETFET可以使用.

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