高效的室温旋转轨道扭矩切换在一个范德瓦尔斯异构结构的拓绝缘体和铁磁体
Gyu Seung Choi1,2, Sungyu Park1, Eun-Su An1,2
1Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea.
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|March 23, 2024
概括
这项研究优化了使用拓绝缘体的范德瓦尔斯异构结构,以实现高效的室温自旋电子学. 在拓表面状态下增强的电流流量可以提高旋转轨道扭矩装置的性能.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 这就是Spintronics.
背景情况:
- 范德瓦尔斯 (vdW) 异构结构使在室温下高性能自旋电子器件成为可能.
- 拓绝缘器 (TI) 是通过拓表面状态 (TSS) 产生旋转轨道扭矩 (SOT) 的关键组件.
- 通过散装状态的电流泄漏限制了基于TI的传统SOT设备的效率.
研究的目的:
- 为了提高 vdW 异构结构中的接口电荷转旋转换效率 (qICS).
- 为了克服目前以拓绝缘体为基础的自旋电子设备中的泄漏问题.
- 为了证明在室温下有效的电流控制磁化开关.
主要方法:
- 使用Sn化Bi1.1Sb0.9Te2S1 (一个散装绝缘TI) 和Fe3GaTe2 (一个室温铁磁体) 制造一个VDW异构结构.
- 原子薄层沉积和接口工程.
- 电流传输特性和旋转轨道扭矩效率的表征.
主要成果:
- 通过厚度优化,在TSS上达到20%的相对电流比.
- 达到了1.65nm-1的高接口电荷转旋转换效率 (qICS).
- 在300K时表现出低临界电流密度 (Jc) ≈0.9 × 106 Acm-2,性能优于现有的SOT设备.
结论:
- 具有优化厚度的全-vdW异构结构是高效的自旋电子功能的有希望的平台.
- 这种方法有效地抑制了电流泄漏,并增强了旋转到充电的转换.
- 开发的异构结构使得在室温下高效的电流控制磁化开关成为可能.
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