高密度通过RRAM单元通过当前合规电路进行多级设置.
Yu-Cheng Hsieh1, Yu-Cheng Lin1, Yao-Hung Huang1
1Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Discover nano
|March 25, 2024
概括
这项研究通过使用标准FinFET CMOS逻辑,通过电阻随机存取内存 (RRAM) 演示了多级存储. 新的电路确保了稳定的电阻控制,改善了高级内存应用的多级状态稳定性和分布.
科学领域:
- 固态设备物理 固态设备物理
- 非挥发性内存技术的技术.
- 先进的半导体制造业 半导体制造
背景情况:
- 电阻随机访问存储器 (RRAM) 为非易失性存储器提供高密度和低功耗.
- 在RRAM中实现稳定的多层存储对于增加内存容量至关重要.
- 标准的CMOS逻辑流程对于集成新型内存设备是可取的.
研究的目的:
- 通过RRAM首次报告和展示RRAM中的多层存储能力.
- 开发和验证用于稳定电阻控制的新型电流合规设置电路.
- 通过RRAM提高稳定性和收紧多层次状态的分布.
主要方法:
- 在RRAM中实现多级存储,使用标准的FinFET CMOS逻辑流程.
- 控制多层次状态,通过精确管理在设置操作期间的当前合规性.
- 设计和整合新的当前合规设置电路,以减轻过程变化效应.
主要成果:
- 通过RRAM成功演示了多级存储.
- 通过拟议的当前合规设置电路实现了稳定的电阻控制.
- 通过RRAM细胞观察到通过RRAM细胞在多层次状态中改善稳定性和收紧分布.
结论:
- 多级存储是可行的,并通过RRAM在标准FinFET CMOS逻辑过程中证明了这一点.
- 目前提出的合规回路有效地提高了多层次状态的稳定性和可靠性.
- 这项工作为基于RRAM技术的高密度非易失性内存解决方案铺平了道路.
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