RRAM.

Yu-Cheng Hsieh1, Yu-Cheng Lin1, Yao-Hung Huang1

  • 1Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.

Discover nano
|March 25, 2024
PubMed
概括

这项研究通过使用标准FinFET CMOS逻辑,通过电阻随机存取内存 (RRAM) 演示了多级存储. 新的电路确保了稳定的电阻控制,改善了高级内存应用的多级状态稳定性和分布.

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