超高光响应性和检测能力在2D石硫化物光探测器中用于Vis-NIR辐射
Vinod Panwar1, Manoj Dey2, Pragya Sharma1
1Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, Karnataka, 560012, India.
Small (Weinheim an der Bergstrasse, Germany)
|March 26, 2024
概括
硫化物 (Bi2S3) 2D材料在光探测器应用中表现出显著的温度依赖的传输特性. 这种新型材料实现了超高的响应性和检测能力,性能优于现有的二维光探测器.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 硫化物 (Bi2S3) 是一种具有直接能量带隙和广泛光学吸收的二维材料.
- 2D材料越来越多地被用于先进的电子和光电子设备.
研究的目的:
- 为了研究2D Bi2S3在场效应晶体管 (FET) 光探测器中的温度依赖的传输特性.
- 探索2D Bi2S3作为高性能光探测器材料的潜力.
主要方法:
- 一个2D Bi2S3 FET光探测器的制造.
- 取决于温度的电阻测量.
- 光发光,时间分辨光发光,霍尔测量和能量分散式X射线光谱学.
- 密度函数理论 (DFT) 计算用于缺陷分析.
主要成果:
- 观察到电阻在10K下降了99.26%,而在300K下降了99.26%,这归因于诸如斯木和硫空缺等缺陷.
- 实现了超高的响应能力 (≈10^6 A/W) 和检测能力 (≈10^14 Jones).
- 在广泛的光谱 (532-1064 nm) 中,测量的外部量子效率为≈10^7%,具有低噪声等效功率.
结论:
- 2D Bi2S3表现出异常的温度依赖的传输特性,这对光检测器性能至关重要.
- 缺陷显著影响材料的特性,使其具有特殊的光电子行为.
- Bi2S3 FET光探测器表现出卓越的性能,超过其他2D光探测器.
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