基于第一原则计算和伊辛格模型的C-doped MgO磁性的研究
Rui-Da Chen1, Jia-Jun Mo2, Fei Mao1
1School of Nuclear Science and Technology, University of South China, Hengyang 421001, China. maofei@mail.bnu.edu.cn.
Physical chemistry chemical physics : PCCP
|March 26, 2024
概括
碳兴奋剂氧化 (MgO) 产生稀释的磁性半导体. 这项研究揭示了碳杂质引入磁矩,并确定了潜在的自旋电子应用的库里温度.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 计算材料科学科学 计算材料科学
背景情况:
- 稀释磁性半导体 (DMS) 对自旋电子有希望.
- 石盐结构的氧化 (MgO) 是一种具有DMS应用潜力的绝缘体.
- 了解剂对MgO电子和磁性特性的影响至关重要.
研究的目的:
- 为了研究碳化MGO (C化MGO) 的电子和磁性特性.
- 为了确定磁性和磁矩引入在C-doped MgO中的机制.
- 为了计算库里温度和模拟磁性行为,用于潜在的自旋电子应用.
主要方法:
- 使用第一原理计算来研究电子结构和磁性特性.
- 使用Ising模型来模拟磁化和易感性.
- 计算包括极化能量,形成能量和磁化能量.
主要成果:
- 碳杂质在MgO中取代氧气,在p状态下产生电子孔.
- 每个碳杂质都会引入2波尔磁子 (2μB) 的磁矩.
- 确定了C-doped MgO的基里温度,表明了铁磁排序的潜力.
结论:
- C-doped MgO 具有 d0 稀释磁性半导体的特性.
- 这项研究提供了对该系统中磁性控制的基本机制的见解.
- 结果表明C-doped MgO是未来自旋器件的可行候选者.
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