通过高吞吐量研究来确定内在斜坡晶体管的原子薄隔离带通道
Hengze Qu1, Shengli Zhang1, Jiang Cao2
1MIIT Key Laboratory of Advanced Display Materials and Devices, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
Science bulletin
|March 26, 2024
概括
研究人员使用二维半导体开发了低功率场效应晶体管 (FET),以克服下值摆动 (SS) 的限制. 这一突破使得超低压电子和先进的逻辑电路的亚热学SS.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 电气工程 电气工程
背景情况:
- 开发低功率场效应晶体管 (FET) 对于推进逻辑电路至关重要,特别是当金属氧化物半导体场效应晶体管 (MOSFET) 接近10纳米以下的特征大小时.
- 目前,MOSFET的性能受到下值摆动 (SS) 的热力学限制限制,在室温下限制为每十年60mV.
研究的目的:
- 通过利用具有隔离带特征的2D半导体,在MOSFET中实现亚热学SS的新策略.
- 根据原子结构和轨道相互作用建立一个指导原则来识别具有亚热能运输潜力的二维材料.
- 选一个大型的二维材料数据库,以确定低功耗电子应用的有前途的候选人.
主要方法:
- 采用高通量计算来选1608个二维材料系统的数据库.
- 开发了一种结合原子结构和轨道相互作用的指导原则,以预测亚热电传输潜力.
- 分析了亚热传输性能和电子结构之间的物理关系.
主要成果:
- 根据既定的指导原则,选了192个候选的2D材料.
- 确定了15个2D材料系统,在低功耗应用中表现出有前途的设备性能,供应电压低于0.5V.
- 揭示了将电子结构与亚热电传输特性联系起来的潜在物理机制.
结论:
- 使用带隔离的二维半导体的拟议策略为在MOSFET中实现亚热能SS提供了一条新的途径.
- 这项研究为发现适用于超低功耗电子产品的新型二维材料提供了预测框架.
- 预计这些发现将刺激实验努力,为下一代电子设备实现内在的坡MOSFET.
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