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探索创伤模式和贡献因素与耳植入后的苗条直线电极阵列后耳植入.

Renato Torres1,2, Hannah Daoudi1,2, Wenxi Gu1,2,3

  • 1Unité Fonctionnelle Implants Auditifs et Explorations Fonctionnelles, Service ORL, GHU Pitié-Salpêtrière, Assistance Publique-Hôpitaux de Paris (AP-HP)/Sorbonne Université, Paris, France.

Otolaryngology--head and neck surgery : official journal of American Academy of Otolaryngology-Head and Neck Surgery
|March 27, 2024
PubMed
概括

耳植入物电极插入可以引起创伤,56%的病例显示创伤模式. 更深的电极放置与风险增加有关,特别是在远距离和近距离的耳区域.

关键词:
基底膜/伤口的伤害带/损伤/损伤带/病理学 带/病理学电极,植入/不良影响.图像,三维/方法机器人/仪器仪表技术 机器人/仪器仪表技术

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科学领域:

  • 耳鼻喉科 耳鼻喉科 耳鼻喉科
  • 神经外科 神经外科
  • 生物医学工程 生物医学工程

背景情况:

  • 耳植入器是严重到严重的听力损失的常见治疗方法.
  • 侧壁电极阵列被广泛使用,但插入可以导致内创伤.
  • 了解创伤模式对于改善手术技术和患者的治疗结果至关重要.

研究的目的:

  • 为了研究与耳植入器中侧面壁电极阵列插入相关的创伤模式.
  • 确定导致创伤插入的因素,重点关注相对于耳结构的电极位置.

主要方法:

  • 对106名耳植入体接受者的回顾性分析.
  • 分析电极阵列位置的三维重建 (大 tympani,中间,大 vestibuli).
  • 手动和机器人插入技术的比较 (RobOtol®).

主要成果:

  • 56%的插入被归类为创伤性.
  • 与圆窗相比,第一个电极的更深的放置与创伤性插入有显著的相关性 (P=0.03).
  • 在远距离和近距离的耳区域确定了不同的创伤模式.

结论:

  • 中间电极位置可能与基底膜病变有关.
  • 更深的电极阵列放置是内内创伤的独立风险因素.
  • 更温和的插入技术和优化的插入深度可以减少外科创伤.