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Updated: Jul 19, 2026

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
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通过TA兴奋剂提高MnTe薄膜的多层记忆性能

Yukang Yuan1, Lai He1, Jin Qian1

  • 1Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, People's Republic of China.

ACS applied materials & interfaces
|March 27, 2024
PubMed
概括

坦坦兴奋剂稳定无形 telluride 薄膜,使多层次的相位变换记忆. 这项研究提供了关于设计先进的数据存储解决方案的见解,这些解决方案具有改进的热稳定性和多个电阻状态.

关键词:
塔多的MnTe薄膜使用.结晶的行为 结晶的行为多层次细胞是多层次的细胞.阶段分离的相位分离.阶段变化内存的阶段变化内存.

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