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Updated: Jun 29, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
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Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

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高性能记忆突触突触由铁电性ZnVO-based Schottky交叉路口组成

Youngmin Lee1,2, Chulwoong Hong1, Sankar Sekar1,2

  • 1Department of Semiconductor Science, Dongguk University-Seoul, Seoul 04620, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|March 27, 2024
PubMed
概括

研究人员使用ZnVO开发了一种新的铁电Schottky结 (FSJ) 设备,证明了用于神经形态计算的高性能突触功能. 这一突破为先进的大脑启发的计算系统铺平了道路.

关键词:
铁电工程斯科特基交叉口突触装置是一种突触装置.添加瓦纳的 ZnO 合物

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx09:49

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