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Updated: Jun 30, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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通过采用交替O2等离子处理,提高了基于GaN的MIS-HEMT的稳定性和门可靠性

Xinling Xie1, Qiang Wang1, Maolin Pan1

  • 1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.

Nanomaterials (Basel, Switzerland)
|March 27, 2024
PubMed
概括

用交替O2等离子体处理的AlGaN/GaN金属绝缘体半导体高电子流动性晶体管 (MIS-HEMT) 显示出更好的值电压 (Vth) 稳定性和门可靠性. 这种增强归因于更高的导电带偏移,抑制了门泄漏电流.

关键词:
AlGaN/GaN MIS-HEMTT AlGaN/GaN MIS-HEMT AlGaN/GaN MIS-HEMT AlGaN/GaN MIS-HEMT AlGaN/GaN MIS-HEMT AlGaN/GaN MIS-HEMT AlGaN/GaN MIS-HEMT AlGaN/GaN MIS-HEMT AlGaN/GaN MIS-HEMT AlGaN/GaN MIS-HEMT AlGaN/GaN MIS-HEMT AlGaN/GaN MIS-HEMT AlGaN/GaN MIS-HEMT AlGaN/GaN MIS-HEMT AlGaN/GaN/GaN MIS-HEMT AlGaN/GaN/GaN MIS-HEMT AlGaN/GaN/GaN MIS-HEMT AlGaN/GaN/GaN MIS-HEMT AlGaN/GaN/GaN/GaN/GaN/GaN/GaN/GaN门的可靠性 门的可靠性门电压的稳定性 门电压的稳定性

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