Y2O3 访

Yoonjin Cho1, Sangwoo Lee1, Seongwon Heo1

  • 1School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.

概括

银顶电极可以提高Y2O3电阻随机存储器 (RRAM) 设备的性能. 在Y2O3中更快的银离子迁移降低了SET电压,并提高了对非挥发性内存应用的耐久性.