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Updated: Jun 29, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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在浅层Ge/SiGe异构结构上的Mn5Ge3接触的表征

Troy A Hutchins-Delgado1,2,3, Sadhvikas J Addamane1,2, Ping Lu1

  • 1Sandia National Laboratories, Albuquerque, NM 87185, USA.

Nanomaterials (Basel, Switzerland)
|March 27, 2024
PubMed
概括

在/- (Ge/SiGe) 量子井上成功制造了聚 (Mn5Ge3) 接触器. 这些接触器具有出色的p型导电性和可调节的电特性,使它们适合用于自旋电子设备.

关键词:
在Ge/SiGeGe中使用.在Mn5Ge3中,Mn5Ge3是什么?德国人的德语是德语的.阶段形成阶段形成阶段形成.固态合成固态合成薄膜薄膜是一种薄膜.

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