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具有超薄的氧化通道的高性能铁电场效应晶体管用于灵活透明的电子产品

Qingxuan Li^1,2, Siwei Wang³, Zhenhai Li³

¹School of Integrated Circuits, Anhui University, Anhui, 230601, PR China. liqx@ahu.edu.cn.

Nature communications

|March 28, 2024

概括

研究人员开发了一种灵活的铁电记忆器 (FeFET),使用基于 hafnium 的铁电和氧化物. 该设备为可穿戴电子设备和边缘智能应用提供高性能和可靠性.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
纳米技术纳米技术

背景情况:

在可穿戴设备中对高性能柔性铁电记忆的需求日益增长.
在铁电记忆中实现灵活性和显著性能方面的挑战.
需要用于边缘智能的后端兼容解决方案 (BEOL).

研究的目的:

开发一款高性能灵活的铁电场效应晶体管 (FeFET) 装置.
将基于 hafnium 的铁电材料与超薄通道材料集成,以提高灵活性和性能.
探索开发的FeFET的神经形态特性和曲可靠性.

主要方法:

使用Zr-doped HfO2 (HZO) 和超薄的氧化物 (ITO) 制造柔性FeFET.
使用低热量预算工艺 (<400°C).
测试的设备性能包括内存窗口,电流开/关比,耐久性和曲可靠性.

主要成果:

实现了2.78V的大内存窗口 (MW) 和高电流开/关比 (I_ON/I_OFF) 超过108.8.
证明了高耐力,可达2x10^7周期.
展现出出色的曲可靠性 (>5x10^5周期在5毫米半径) 和神经形态性质.

结论:

开发的灵活FeFET在可穿戴应用中展示了卓越的性能和可靠性.
高效的HZO和ITO集成使得高性能,BEOL兼容的FeFETs成为可能.
为边缘智能应用提供了有前途的机会,利用灵活的铁电内存.

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