在少层和薄膜MoS2Memristive设备中导致歇斯底里的缺陷
Saadman Abedin1, Vladislav Kurtash1, Sobin Mathew1
1FG-Nanotechnologie, Institut für Mikro-und Nanoelektronik, Institut für Mikro-und Nanotechnologien MacroNano®, Institut für Werkstofftechnik, TU Ilmenau, Postfach 100565, 98684 Ilmenau, Germany.
Materials (Basel, Switzerland)
|March 28, 2024
概括
二硫化物 (MoS2) 场效应晶体管 (FET) 显示出歇斯底里. 薄膜MoS2FET由于散装缺陷而表现出更多的歇斯底里,与少层设备不同,影响了记忆应用.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 二硫化物 (MoS) 是一种2D材料,具有非诺曼计算的潜力.
- 在MoS2场效应晶体管 (FET) 中的歇斯底里是一种关键现象,通常归因于接口电荷捕获或分子吸附.
- 道厚度和MoS2FET歇斯底里的内在缺陷的作用需要进一步调查.
研究的目的:
- 调查在少数层 (FL) 和薄膜 (TF) MoS2 FETs中歇斯底里的起源.
- 为了区分批量与接口缺陷对MoS2记忆器件中歇斯底里的贡献.
- 为了指导选择MoS2设备类型用于特定的memristive应用程序.
主要方法:
- 使用化学蒸汽沉积 (CVD) 制造后门调制的MoS2FET.
- FL和TF MoS2通道的特征.
- 对电流-电压 (I-V) 和导电频率 (Gp/ω-f) 测量的分析.
主要成果:
- 薄膜 (TF) MoS2 FETs与少层 (FL) MoS2 FETs相比,表现出明显更高的歇斯底里.
- TF MoS2设备的歇斯底里增加主要是由于通道体积内内在缺陷的贡献更大.
- 与散装缺陷相比,接口缺陷在TF MoS2观察到的歇斯底里中起的作用较小.
结论:
- 内在散装缺陷是薄膜MoS2FET中歇斯底里的主要原因,超过了接口缺陷的影响.
- 了解批量和接口缺陷贡献对于分析MoS2FET中的歇斯底里,特别是TF设备至关重要.
- 对于memristive应用的设备选择应考虑FL与TF MoS之间的歇斯底里和扩展能力之间的权衡.
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