金属氧化物半导体场效应晶体管输出寄生电容对全桥LLC直流/直流转换器效率的影响
Ming-Hung Chen1, Chia-Wen Hsieh1
1Department of Electrical Engineering, Ming Chi University of Technology, New Taipei City 243303, Taiwan.
Micromachines
|March 28, 2024
概括
在全桥型LLC直流/直流转换器中优化MOSFET输出寄生电容 (Coss) 显著提高了效率. 这项研究展示了一种通过仔细管理Coss来提高转换器性能的实用方法,从而改善功率转换.
科学领域:
- 电气工程 电气工程
- 电力电子 电力电子 电力电子
- 半导体设备 半导体设备
背景情况:
- 全桥型LLC直流/直流转换器对于高效的功率转换至关重要.
- 输出寄生电容 (Coss) 是影响转换器效率的一个关键参数.
- 现有的设计往往忽视了Coss对开关和导电损失的确切影响.
研究的目的:
- 分析MOSFET输出寄生电容 (Coss) 在全桥LLC直流/直流转换器中的效率影响.
- 为了确定最大化转换器效率的最佳Coss值.
- 为了研究Coss,切换损失和导电损失之间的关系.
主要方法:
- 使用半桥控制芯片来管理全桥LC DC/DC转换器拓.
- 分析了主侧功率晶体管Coss对开关和导电损失的影响.
- 制造了一个1200W转换器原型,用于经验验证.
主要成果:
- 在主侧通过LLC共振实现了零电压切换 (ZVS).
- 在300W输出时,效率从92.603%提高到93.462% (改善了0.859%).
- 经验结果证实了Coss对效率影响的理论分析.
结论:
- 管理MOSFET输出寄生电容对于提高全桥LLC直流/直流转换器效率至关重要.
- 该研究提供了一种经过验证的方法来选择适当的Coss值.
- 提出的方法有助于实现更高的功率密度和更简单的转换器结构.
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