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负偏差不稳定性和自热效应对值电压和SRAM (静态随机访问存储器) 的相互作用纳米板场效应晶体管的稳定性
Xiaoming Li1, Yali Shao2, Yunqi Wang1
1School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines
|March 28, 2024
概括
负偏差不稳定性 (NBTI) 和自我加热效应 (SHE) 在纳米片场效应晶体管 (NSFET) 中具有复杂的相互作用. 增加纳米板宽度可以减轻NBTI.
科学领域:
- 半导体设备物理 半导体设备物理
- 先进的晶体管技术 先进的晶体管技术
- 可靠性工程可靠性工程
背景情况:
- 负偏差不稳定性 (NBTI) 和自我加热效应 (SHE) 是现代半导体设备的关键可靠性问题.
- 纳米板场效应晶体管 (NSFET) 提供了增强的静电控制,但需要彻底的可靠性分析.
- 了解NBTI和SHE之间的相互作用对于预测设备寿命和性能至关重要.
研究的目的:
- 研究NBTI和SHE对NSFETs值电压的合效应.
- 分析纳米板宽度如何影响NBTI和SHE之间的相互作用.
- 评估这些综合效应对静态随机存储器 (SRAM) 细胞性能的影响.
主要方法:
- 开发一个结合陷微动力学的NBTI模拟框架.
- 将自我加热效应纳入模拟框架,以建模它们的相互作用.
- 纳米板宽度的参数研究,以评估其对NBTI和SHE的影响.
- 将分析扩展到SRAM单元电路,以评估像静态噪声边缘 (SNM) 这样的性能指标.
主要成果:
- 发现NBTI会削弱SHE,而SHE会加剧NBTI的影响.
- 增加纳米板宽度减少了NBTI效应,但增强了SHE效应.
- NBTI降解SRAM细胞的SNM,当SHE存在时观察到更显著的下降.
- 更宽的纳米片有助于减轻NBTI对SRAM性能的负面影响,即使是在SHE下.
结论:
- 在NSFET中NBTI和SHE之间的相互作用是复杂的,并且取决于设备几何.
- 纳米板宽度是管理NBTI和SHE之间的权衡的一个关键参数.
- 优化纳米板宽度可以提高基于NSFET的SRAM电路的可靠性和性能.
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