像素设计和操作条件对4T CMOS图像传感器线性输出范围的影响
Wenxuan Zhang1, Xing Xu1, Zhengxi Cheng1
1Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
Sensors (Basel, Switzerland)
|March 28, 2024
概括
优化CMOS图像传感器设计,包括浮式扩散电容和固定光二极管兴奋剂,显著提高线性输出范围. 转换门采样时间等操作条件也可以在不增加噪音的情况下提高性能.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
背景情况:
- 在数字成像中,CMOS图像传感器 (CIS) 是至关重要的.
- 线性输出范围是图像质量的关键性能指标.
- 了解影响线性因素对于传感器设计至关重要.
研究的目的:
- 分析影响CMOS图像传感器线性输出范围的因素.
- 量化像素设计和操作条件对线性的影响.
- 为设计高度线性像素提供见解.
主要方法:
- 使用0.18微米CIS工艺制造测试芯片,使用不同的像素大小 (10微米和20微米).
- 漂浮扩散 (FD) 电容 (10-23.3 fF) 和固定光二极管 (PPD) 的实验分析.
- 调查电荷传输时间,重置电压和输出缓冲器设计效应.
主要成果:
- 优化FD电容和PPD设计将线性输出范围分别提高了37%和32%.
- 延长传输门 (TG) 采样时间,对于较大的像素,线性输出范围增加了60%以上.
- 优化输出缓冲区和TG采样时间被确定为关键的操作因素.
结论:
- 线性输出范围受到像素设计 (FD电容,PPD染) 和操作条件 (TG采样时间) 的影响.
- 设计策略可以提高线性,而不会显著增加读取噪声.
- 这些发现为开发先进的,高度线性CMOS图像传感器提供了宝贵的见解.
相关概念视频
Characteristics of MOSFET
373
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
373
Small-Signal Analysis of MOSFET Amplifiers
554
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
554
MOSFET Amplifiers
156
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
156
Characteristics of OpAmp
731
The operational amplifier, commonly known as an op-amp, is a specially designed electronic circuit component. Its purpose is to work in conjunction with other circuit elements to execute a defined signal-processing operation. Consider an equivalent circuit model of an op-amp, as depicted in Figure 1; the output section comprises a voltage-controlled source in parallel with the output resistance Ro.
731
Characteristics of Practical Op Amps
517
A difference amplifier, a crucial component in numerous electronic devices, ideally amplifies only the difference-mode signal, which is the difference between two input signals. However, in practical circuits, the output voltage depends on both the differential gain and the common-mode gain.
The ratio of differential gain to the common-mode gain is defined as the common-mode rejection ratio (CMRR). This ratio quantifies the ability of operational amplifiers (op-amps) to reject common-mode...
The ratio of differential gain to the common-mode gain is defined as the common-mode rejection ratio (CMRR). This ratio quantifies the ability of operational amplifiers (op-amps) to reject common-mode...
517
MOSFET: Enhancement Mode
333
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
333


