在平面的霍尔设置中以倾斜的韦尔/多韦尔半金属的方向依赖导电性
Rahul Ghosh1, Ipsita Mandal1,2
1Department of Physics, Shiv Nadar Institution of Eminence (SNIoE), Gautam Buddha Nagar, Uttar Pradesh 201314, India.
概括
我们计算了韦尔半金属的磁电导率,发现了独特的拓效应. 这些效应在磁场强度上是线性的,主导导率,并改变响应周期和信号.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 拓学材料科学科学 拓学材料科学
背景情况:
- 韦尔半金属 (WSM) 和多韦尔半金属 (mWSM) 由于其带结构拓,具有独特的电子特性.
- 材料中的磁电效应对于先进的电子应用至关重要.
研究的目的:
- 在各种电磁场方向下计算倾斜的WSM和mWSM中的磁电导电张量.
- 调查非德鲁德导电性贡献的起源和特征.
主要方法:
- 磁电导电张数的理论计算.
- 分析平面大厅配置与倾斜的WSMs/mWSMs的响应.
- 考虑电磁场的所有相对方向和倾斜方向.
主要成果:
- 在倾斜的WSM/mWSM中发现了由贝里曲率引起的导电性的线性-in-deviceB条数.
- 这些拓术语主宰了现实的参数制度,并且独立于B的D^2术语.
- 观察到响应周期 (π到2π) 和信号的变化,取决于电场和磁场之间的角度.
结论:
- 倾斜的存在对于在特定配置中观察线性-in-wideband磁电效应至关重要.
- 这些拓效应为识别WSM/mWSM属性提供了独特的特征.
- 这些发现为拓半金属的基本运输特性提供了洞察力.
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