在接近室温的范德瓦尔斯铁磁铁中,可逆非挥发性电子切换
Han Wu1, Lei Chen1, Paul Malinowski2
1Department of Physics and Astronomy and Rice Center for Quantum Materials, Rice University, Houston, TX, USA.
Nature communications
|March 29, 2024
概括
研究人员在范德瓦尔斯铁磁体Fe5-δGeTe2.2中实现了两个晶体相之间的非挥发性切换. 这一突破通过控制不同的电子结构和对称性,为先进的电子设备提供了新的可能性.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
背景情况:
- 非挥发性相变存储器依赖于在晶体和无形状态之间切换.
- 在高级内存应用中,实现不同对称度的两个不同的晶相之间的切换至关重要.
研究的目的:
- 为了证明范德瓦尔斯铁磁铁Fe5-δGeTe2.2中两个稳定的晶体相之间的可逆和非挥发性切换.
- 调查Fe站点空缺排序在控制晶体对称性和电子结构中的作用.
主要方法:
- 利用热和火来控制Fe站点空缺的排序和混乱.
- 两个相的独特的晶体对称性和电子结构的特点.
主要成果:
- 在室温附近的Fe5-δGeTe2中观察到两个密切相关的晶体结构之间的可逆和非挥发性切换.
- 在两个阶段确定了不同的电子结构,包括拓节点线和平面带.
- 证明切换是由Fe空位的排序/混乱驱动的,导致晶体对称性的变化.
结论:
- Fe5-δGeTe2系统在两个具有明显电子性质的晶体相之间表现出可控制的非挥发性切换.
- 这种基于空缺排序的切换机制为开发下一代电子存储器件提供了新的途径.
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