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喷墨打印IGZO记忆器具有挥发性和非挥发性切换

Miguel Franco^1,2, Asal Kiazadeh³, Jonas Deuermeier²

¹Center of Physics, University of Minho and Laboratory of Physics for Materials and Emergent Technologies, LapMET, Campus de Gualtar, 4710-057, Braga, Portugal.

Scientific reports

|March 30, 2024

概括

喷墨印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印印这些设备表现出非挥发性和挥发性电阻切换,证明了时间信号处理的潜力.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
电子电子电子电子电子电子电子

背景情况:

基于解决方案的memristors提供可扩展,具有成本效益和环保的电子元件.
--氧化物 (IGZO) 是一种有前途的氧化物半导体,用于电阻开关应用.

研究的目的:

为了制造和表征喷墨印刷的银/IGZO/氧化 (Ag/IGZO/ITO) 记忆器.
为了研究IGZO厚度对设备性能的影响.
探索这些memristors在时间信号处理中的潜力.

主要方法:

使用喷墨打印制造Ag/IGZO/ITO记忆器的制造.
电阻开关性能的电气特征,包括SET/RESET电压,保留和内存窗口.
分析挥发性和非挥发性切换行为.
用4位脉冲序列测试挥发性特征.

主要成果:

制造的memristors在低工作电压下表现出非挥发性和挥发性电阻开关.
非挥发性开关显示SET/RESET电压低于2V/-5V,保留时间高达10^5秒,内存窗口为100.
挥发性切换显示了低值电压 (<-0.65V) 和0.75±0.12毫秒的特征时间,这与脉冲数不同.
这些设备显示出时间信号处理应用的潜力.

结论:

喷墨打印的Ag/IGZO/ITO记忆器适用于电子记忆应用.
设备性能,包括内存窗口和开关电压,可通过IGZO厚度调节.
观察到的挥发性切换特征为神经形态计算和时间信号处理打开了可能性.

关键词:

伊格佐·伊格佐 (IGZO) 是一个喷墨印刷是一种喷墨印刷.记忆力记忆力记忆力印刷电子产品印刷电子产品挥发性和非挥发性行为.

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