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Updated: Jun 29, 2025

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

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嵌入核心绝缘器纳米板场效应晶体管用于抑制设备对设备的变化

Donghwi Son1, Hyunwoo Lee1, Hyunsoo Kim1

  • 1Department of Electrical Engineering, Sejong University, Seoul, 05006, Korea.

Scientific reports
|March 30, 2024
PubMed
概括

与核心绝缘器嵌入的纳米板场效应晶体管 (C-NSFETs) 与传统的纳米板场效应晶体管 (NSFETs) 相比,提供更高的性能和更低的可变性. 这一进步源于改进的门控和对制造变化的弹性.

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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
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