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TCAD模拟研究重离子辐射对异质连接无道场效应晶体管的影响

K Aishwarya¹, B Lakshmi²

¹School of Electronics Engineering, Vellore Institute of Technology, Chennai, India.

Scientific reports

|April 1, 2024

概括

体 (SiGe) 在无连接道场效应晶体管 (JLTFET) 中显示出优越的辐射硬度. 与其他材料相比,基于SiGe的JLTFET在重离子辐射下表现出明显较低的峰值电流和值电压变化.

科学领域:

固态物理和半导体设备工程.
辐射对电子材料和设备的影响.

背景情况:

半导体设备在辐射环境中降解,影响性能.
无连接道场效应晶体管 (JLTFET) 为短通道效应和制造挑战提供了解决方案.

研究的目的:

在重离子辐射下研究20纳米JLTFET的辐射硬度,使用不同的源材料 (SiGe,GaN,GaAs,InAs).
识别对辐射最敏感的接口并分析设备性能下降.

主要方法:

用排水/通道和不同源材料制造20nm的JLTFET.
暴露于重离子辐射在不同的线性能量转移 (LET) 剂量.
暂时模拟以提取关键设备参数,如峰值电流 (Ipeak),收集电荷 (QC),值电压转移 (ΔVth) 和双极增益 (β).

主要成果:

源/通道 (S/C) 接口对SiGe,GaN和GaAs最敏感,而排水/通道 (D/C) 接口对InAs最敏感.
与InAs相比,SiGe的Ipeak在较低的LET下降了27%,Ipeak在较高的LET下降了56%.
由于较低的ΔVth,道化和电子密度,SiGe表现出降低的灵敏度.

结论:

SiGe是JLTFETs的高度耐辐射材料,性能优于InAs,GaN和GaAs.
了解接口灵敏度对于设计辐射硬化JLTFET至关重要.
带有SiGe源的JLTFET显示出在辐射环境中可靠运行的承诺.

关键词:

在 GaAs GaAs 的情况下.在 GaN GaN 中.这是一个HJLTFETET.重离子辐射是一种重离子辐射.在AsAs中.这里是SIGE SIGE.

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