氧化物和2DTMD半导体用于3DDRAM电池晶体管的半导体
Jae Seok Hur1, Sungsoo Lee2, Jiwon Moon2
1Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea. jkjeong1@hanyang.ac.kr.
Nanoscale horizons
|April 2, 2024
概括
下一代3D DRAM面临着集成的挑战. 本研究探讨了氧化物半导体 (OSs) 和金属二二化物 (TMDs) 作为先进3D DRAM架构的有希望的通道材料.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 传统的动态随机存储器 (DRAM) 缩放正在达到物理极限.
- 3D DRAM架构被提出为下一代解决方案.
- 在3D DRAM中集成在成本效益高的晶体管性能方面提出了挑战.
研究的目的:
- 提供拟议的3D DRAM结构的概述.
- 为了比较氧化物半导体 (OSs) 和金属二二烯化物 (TMDs) 的3D DRAM.
- 讨论OS和TMD作为3D DRAM道材料的可行性.
主要方法:
- 关于3D DRAM结构的文献综述.
- 对OS和TMD材料特性进行比较分析.
- 评估基于操作系统的3D DRAM最近取得的进展.
主要成果:
- 操作系统和TMD是3D DRAM中的可行替代品.
- 对于通道应用,OS和TMD的特定材料性能进行了评估.
- 最近的进展凸显了操作系统在克服基于的局限性的潜力.
结论:
- 操作系统和TMD为下一代3D DRAM提供了有希望的途径.
- 这些材料有可能解决基于的3D DRAM的性能和成本挑战.
- 对操作系统的进一步研究对于实现先进的3D DRAM技术至关重要.
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