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一个基于铁电道交叉路口的多态非挥发性光电子记忆装置,具有可调节可见光光响应

Zhuokun Han¹, Yu Chang¹, Bingcheng Luo¹

¹School of Physical Science and Technology, MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an 710072, P.R. China.

ACS applied materials & interfaces

|April 3, 2024

概括

本研究介绍了一种使用无形的新型铁电道结 (FTJ). 该设备显示可见光光响应和多态记忆,推进光电子记忆技术.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

铁电道结 (FTJ) 显示出偏振依赖的光反应和道电阻 (TER).
现有的FTJ通常具有有限的紫外线光响应.
通过光电流读取极化状态是一个关键的挑战.

研究的目的:

为了制造和描述一种新的无形 (a-Se) / PbZr_0.2Ti_0.8O₃ (PZT) / Nb-doped SrTiO₃ (NSTO) 异质连接.
为了研究其由铁电极化调节的自动供电可见光光响应.
为了演示具有非破坏性读取的多状态信息存储.

主要方法:

一个-Se/PZT/NSTO异质连接的制造.
测量道电阻 (TER) 和光电流.
用铁电极化状态调节光电流.

主要成果:

实现了 3 × 10 6 的高 TER.
证明了自动供电可见光光反应.
通过偏振电压调节的光电流增加了1200%.
成功设计了具有非破坏性读取输出的多状态信息存储.

结论:

新的a-Se/PZT/NSTO异质连接使可见光驱动的光电子存储器成为可能.
铁电极化有效调节光电流用于数据存储.
这项工作扩展了FTJ设计用于高密度光电子内存应用.

关键词:

PZT铁电工业公司多状态内存多状态内存.光响应调制光响应调制.道挖掘电阻电阻的道可见光探测器可见光探测器

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