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    科学领域:

    • 光学和光子学 在光学和光子学.
    • 半导体制造技术的技术

    背景情况:

    • 减弱的相位转移面罩 (Att. PSM) 是用于极紫外线 (EUV) 光刻的关键分辨率增强技术 (RET).
    • 欧阳光面具的反射性质会导致阴影效应,降低光刻成像性能和对比度.

    研究的目的:

    • 提议和分析一本小说律师. 为了减轻阴影效应,PSM结构.
    • 为了提高EUV石版画中的图像对比度.

    主要方法:

    • 沿着面具吸收器边缘引入一个吸收侧墙.
    • 理论分析使用Kirchhoff近似用于面具衍射.
    • 通过严格的 lithography 模拟验证.

    主要成果:

    • 这本小说Att. PSM结构有效地减轻了衍射和阴影效应.
    • 理论分析预测成像性能有所改善.
    • 模拟证实了EUV光刻画中图像对比度的增强.

    结论:

    • 提议的检察官. 提议的检察官. 带有吸收侧墙的PSM是改善EUV光刻成像对比度的可行解决方案.
    • 这项技术有可能用于先进的集成电路 (IC) 制造.