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相关概念视频

Modeling of Diode Reverse Characteristics01:14

Modeling of Diode Reverse Characteristics

265
In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
265
Schottky Barrier Diode01:27

Schottky Barrier Diode

345
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
345
Voltage Doubler Circuit01:23

Voltage Doubler Circuit

564
A voltage doubler circuit integrates two main components: a clamping section and a rectifier section. The clamping section consists of a capacitor (C1) and a diode (D1), whereas the rectifier section is equipped with another diode (D2) and capacitor (C2). This circuit produces an output voltage with twice the amplitude of the sinusoidal input voltage.
564
The Ideal Diode01:15

The Ideal Diode

812
A diode is a semiconductor device that allows current to flow in one direction only, making it a crucial component in electronic circuits for controlling the direction of current flow. An ideal diode is a simplified version of a real diode used to understand how diodes work in circuits. It possesses two terminals: the positive anode and the cathode, which is negative. When a positive voltage is applied to the anode relative to the cathode, the diode is in a forward-biased state, allowing...
812
Full wave rectifier01:22

Full wave rectifier

1.1K
A full-wave rectifier is a device that converts alternating current (AC) to direct current (DC) and is more efficient than its half-wave counterpart. It typically includes a center-tapped transformer, two diodes, and a load resistor. The secondary winding of the transformer is divided to provide two equal voltages of opposite polarities, which is the pivotal element of full-wave rectification.
1.1K
Non-ohmic Devices00:51

Non-ohmic Devices

1.1K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.1K

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相关实验视频

Updated: Jun 29, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

11.9K

基于VO2和同等二极管的多功能元材料设备.

Zelong Wang, Xin Wang, Junlin Wang

    Applied optics
    |April 3, 2024
    PubMed
    概括

    本研究介绍了一种可切换的多功能元材料设备,用于太赫兹 (THz) 应用. 它实现了双频吸收和偏振转换,为小型THz设备提供了新的策略.

    科学领域:

    • 超材料是指一种超材料.
    • 特拉赫兹 (THz) 技术技术
    • 电磁学 电磁学 电磁学 电磁学

    背景情况:

    • 超材料具有独特的电磁性质.
    • 太赫兹 (THz) 技术需要各种应用的先进设备.
    • 可切换和多功能设备对于下一代系统至关重要.

    研究的目的:

    • 提出一种可切换的多功能元材料装置,在THz频段运行.
    • 为了展示双频吸收和偏振转换功能.
    • 探索电磁隐形,放射测量和传感方面的应用.

    主要方法:

    • 设计和模拟一个含有相当二极管和二氧化瓦纳 (VO2) 的元材料装置.
    • 在不同的二极管状态下 (ON/OFF) 和VO2相变 (绝缘/导电) 下对设备性能的分析.
    • 对THz频率的吸收光谱和极化转换能力的研究.

    主要成果:

    • I 侧显示 1.975 和 4.345 THz 的双频吸收率 (二极管 ON) 和 4.28 THz 的单频吸收率 (二极管 OFF).
    • II侧实现了从2.342-4.18 THz (VO2绝缘) 的线性到线性 (LTL) 偏振转换.
    • II侧实现了从2.105-3.283 THz (VO2导电) 的线性到循环 (LTC) 偏振转换.

    更多相关视频

    Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
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    Characterizing Dissipative Elastic Metamaterials Produced by Additive Manufacturing
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    Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

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    Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
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    Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

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    Characterizing Dissipative Elastic Metamaterials Produced by Additive Manufacturing
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    Characterizing Dissipative Elastic Metamaterials Produced by Additive Manufacturing

    Published on: June 28, 2024

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    结论:

    • 拟议的设备成功地将多个功能集成到一个单一的超材料结构中.
    • 它为微型THz设备中结合多种功能提供了一种新的策略.
    • 该设备显示出在电磁隐形,智能系统,辐射计和传感器方面的应用潜力显著.