可调节的磁域在铁磁MnSb2Te4中的磁域
Tatiana A Webb1, Afrin N Tamanna2, Xiaxin Ding2
1Department of Physics, Columbia University, New York, New York 10027, United States.
Nano letters
|April 3, 2024
概括
研究人员使用磁场调整了MnSb2Te4 (MST) 中的磁纹,观察了条纹和气泡域. 他们直接测量了与这些域相关的Hall响应,从而实现了可重新配置的设备.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- Mn(Bi,Sb) 2Te4材料为探索磁性和频段拓提供了可调节的特性.
- MnBi2Te4是一种反铁磁拓绝缘体,而MnSb2Te4 (MST) 则表现出可调节的磁结构 (从反铁磁到铁磁).
研究的目的:
- 通过实时空间的磁性纹理来控制铁磁MnSb2Te4 (MST) 的电子特性.
- 研究磁域形态学与电子传输特性之间的关系.
主要方法:
- 磁力显微镜 (MFM) 用于在MST中成像磁域.
- 在现场运输测量与磁场操纵和MFM成像相结合.
- 直接测量异常的霍尔响应与域面积的缩放.
主要成果:
- 磁场应用调整了MST磁域在条纹和泡形态之间.
- 通过域操纵证明了MST设备属性的编写.
- 通过使用MFM成功测量了与磁域相关的局部异常霍尔反应.
结论:
- 这项研究表明,在MST中,拓式旋转纹理的潜力很大.
- 这项工作为使用M(B,S) T材料家族的可重新配置的基于域的电子设备开辟了可能性.
- 突出了MFM作为测量磁性材料中局部异常霍尔响应的工具.
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