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Updated: Aug 11, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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通过InGaN/AlN应变释放间层展示651nm基于InGaN的红色发光二极管,其外部量子效率超过6%,通过InGaN/AlN应变释放间层

Kun Xing, Junwei Hu, Zhengwei Pan

    Optics express
    |April 4, 2024
    PubMed
    概括

    研究人员开发了一种新的应变释放介层 (SRI),用于高性能基于酸 (InGaN) 的发射红色的LED. 这一突破提高了晶体质量和大规模生产的效率.

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    相关概念视频

    Biasing of P-N Junction01:16

    Biasing of P-N Junction

    The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
    In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...