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在基于GaN的翻转芯片绿色迷你LED中通过微观超光谱成像和修改的两级建模进行空间解析的电流密度分布

Yi Lin, Jingyu Deng, Qiyao Li

|April 4, 2024

概括

一个新的模型绘制了GaN绿色迷你LED中的电流密度图,揭示了高电流如何导致缺陷并减少光输出. 这有助于理解发光二极管效率和重组机制.

科学领域:

光电学是指光电子产品.
材料科学材料科学材料科学

背景情况:

基于GaN的绿色迷你LED对于显示器至关重要.
了解电流分布是优化性能的关键.

研究的目的:

在迷你LED中开发一个空间分辨电流密度模型.
为了将电流密度与辐射和非辐射重组相关联.

主要方法:

一个经过修改的双层模型与微观超光谱成像相结合.
激光束诱导电流 (LBIC) 和光谱映射用于验证.

主要成果:

该模型绘制了辐射和非辐射重组的地图.
电极附近的高电流密度表明电流拥挤和缺陷.
光子发射并不总是与电流密度成比例的.

结论:

该模型准确地确定了微区电流密度.
它揭示了迷你LED中的内在重组机制.
这有助于提高迷你LED的效率和设计.

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