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Updated: Aug 17, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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基于AlGaN的深紫外线发光二极管的优化,采用超网格级阶段合电子阻断层

Aoxiang Zhang, Zhongqiu Xing, Yipu Qu

    Optics express
    |April 4, 2024
    PubMed
    概括

    一种新的超级晶格级合电子阻断层 (SLSD EBL) 通过改善孔注入和电子封闭来增强深紫外线发光二极管 (DUV-LED). 这提高了DUV-LED的性能,为电子泄漏和孔注入挑战提供了解决方案.

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    Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

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    Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes07:00

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    相关概念视频

    MOSFET: Enhancement Mode01:22

    MOSFET: Enhancement Mode

    Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
    In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...