非重型合的pnp-AlGaN道连接器,用于高效的深紫外线发光二极管,具有低导电压
Optics express
|April 4, 2024
概括
这项研究引入了一种新的深紫外线 (DUV) 发光二极管 (LED),使用非重型合道连接 (TJ). 这种设计显著提高了光学功率和内部量子效率,同时降低了工作电压,以获得更好的LED性能.
科学领域:
- 光电学是指光电子产品.
- 半导体设备 半导体设备
- 材料科学 材料科学 材料科学
背景情况:
- 传统的道连接 (TJ) 深紫外线 (DUV) 发光二极管 (LED) 面临的挑战是由于高度合的AlGaN层,由于高传导电压.
- 这种高兴奋剂,虽然改善了洞道,但却对LED设备的整体性能和效率产生了负面影响.
研究的目的:
- 提出和研究一种具有降低传导电压的新型非重型合 pnp-AlGaN TJ DUV LED.
- 为了提高DUVLED中的载体度和辐射重组效率.
主要方法:
- 在电子阻断层和孔供应层之间,在活跃区域附近插入 pnp-AlGaN TJ.
- 在pnp-AlGaN TJ中使用偏振电荷来降低电场强度并改善孔道.
- 拟议的DUV LED结构的制造和特征.
主要成果:
- 与传统LED相比,提议的非重量合的TJ DUV LED实现了190.7%的光功率增加.
- 最大内部量子效率 (IQE) 增加了142.8%,达到0.85,低效率下降了5.8%.
- 在120A/cm2的注入电流下,观察到4.1V的显著降低的导电压.
结论:
- 非重型合的pnp-AlGaN TJ设计有效地规避了对重型合层的需求,降低了传导电压.
- 这种方法提高了载体度和辐射效率,从而提高了DUV LED的性能.
- 这些发现为克服高性能TJ DUV LED的局限性提供了一条途径.
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