相关实验视频

Updated: Jun 29, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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低功率晶体管具有理想的p型欧姆接触 基于VS/WSe 范德瓦尔斯异构结构

Zenglin Cao1, Lin Zhu1, Kailun Yao1

  • 1School of Physics and Wuhan National High Magnetic field center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.

ACS applied materials & interfaces
|April 4, 2024
PubMed
概括

这项研究表明,VS2/WSe2-vdWHs-FET中的低电阻欧姆接触对于高性能二维 (2D) 场效应晶体管 (FET) 至关重要. 优化的结构实现了低的肖特基障碍,并满足了低功率的要求.

关键词:
斯科特基屏障的高度是高的在VS2/WSe2-vdWHs-FET中使用.一开始的量子运输模拟.p型的欧米接触式接触器底层层结构结构的结构.

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