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Updated: May 12, 2026

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
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伪纳米结构和被困孔释放导致PbTe的高热电性能

Baohai Jia1, Di Wu2, Lin Xie1

  • 1Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.

Science (New York, N.Y.)
|April 4, 2024
PubMed
概括

研究人员使用电化物开发了先进的热电材料. 这些材料通过控制热和电传输来实现高热电性能 (zT高达2.8),有望实现高效的能量转换.

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...