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和抗兴奋剂对在Si上生长的薄 Ge 层的影响

Xueying Yu¹, Hui Jia², Junjie Yang¹

¹Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.

Scientific reports

|April 4, 2024

概括

(P) 兴奋剂有效地减少 (Si) 上薄的 (Ge) 层中的线程位移 (TD). 一种新的联合兴奋剂技术进一步降低了TD密度,使得基于Si的高性能设备成为可能.

科学领域:

半导体材料科学科学半导体材料科学
材料工程材料工程材料工程
固态物理固态物理

背景情况:

在 (Si) 上薄的 (Ge) 层中最大限度地减少线程位移 (TD) 对基于Si的先进光电子和电子至关重要.
现有的方法需要先进的增长策略来降低Ge-on-Si系统中的TD密度.

研究的目的:

调查 (P) 剂对薄层Ge的TD减少的影响.
探索P诱导的TD抑制的机制,并将其与 (Sb) 兴奋剂进行比较.
开发一种新的联合兴奋剂技术,以进一步降低TD密度.

主要方法:

在Si基板上培养500纳米薄的Ge层,具有不同的P兴奋剂度 (150 × 10^18cm^-3).
通过将P-doped Ge与已建立的Sb-doped Ge-on-Si系统进行比较,分析了TD减少机制.
实施了P和Sb结合的联合兴奋剂战略,以利用它们独特的缺陷抑制机制.

主要成果:

引入P剂显著降低了薄的Ge层中的TD密度.
P 和 Sb 兴奋剂表现出不同的缺陷抑制机制.
与P和Sb共同合进一步降低了500nm Ge层中的表面TD密度,达到10^7cm^-2的程度.

结论:

P兴奋剂是一种有效的策略,用于TD减少Ge-on-Si.
使用P和Sb的新型联合兴奋剂技术提供了增强的TD抑制.
这种方法为下一代半导体设备在Si上提供了高质量的Ge缓冲层.

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