由二维范德瓦尔斯材料ZrSe诱导的旋转轨道扭矩的界面调制3
Lulu Cao1, Qian Chen1, Yonghui Zhu1
1Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, Jiangsu 211189, People's Republic of China.
ACS applied materials & interfaces
|April 5, 2024
概括
这项研究探讨了在旋转轨道扭矩装置中使用ZrSe3. 铜间隙增强了SOT的效率,并减少了ZrSe3/Cu/Py异构结构中的功耗.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 这就是Spintronics.
背景情况:
- 二维范德瓦尔斯 (2D vdW) 材料对于旋转轨道扭矩 (SOT) 装置至关重要.
- ZrSe3表现出低晶体对称性和高自旋霍尔导电性,使其成为低功耗SOT应用的前景.
研究的目的:
- 调查SOT的界面影响.
- 分析ZrSe3/Py和ZrSe3/Cu/Py异构结构中的电流诱导磁化切换.
- 评估铜 (Cu) 介质对SOT效率的影响.
主要方法:
- 旋转扭矩铁磁共振 (ST-FMR) 用于测量SOT的效率.
- 磁光学克尔效应 (MOKE) 显微镜用于电流驱动的磁化开关.
- 理论计算以了解接口电子属性.
主要成果:
- 间隔调节了缓冲式扭矩 (τB) 与场式扭矩 (τA) 的比率,从而降低了tB元件.
- 随着Cu的插入,SOT效率从3.05增加到5.21.
- 间隙将ZrSe3从半导体转变为导体,减少了肖特基障碍并增强了自旋电流传输.
- 与ZrSe3/Cu/Py相比,ZrSe3/Cu/Py结构显示了较低的临界电流密度,而ZrSe3/Py.
结论:
- 在基于ZrSe3的异构结构中,Cu间隙有效地提高了SOT效率.
- 优化的ZrSe3/Cu/Py结构为旋转电子设备的低功耗提供了潜力.
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