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Updated: Jun 29, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

在VO₂/La_0.7Sr_0.3MnO₃/Al₂O₃ (0001) 中进行重新配置的电阻开关,用于神经形态计算的记忆器件

Sundar Kunwar¹, Nicholas Cucciniello^1,2, Alessandro R Mazza^1,3

¹Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States.

ACS applied materials & interfaces

|April 5, 2024

概括

这项研究介绍了VO2/LSMO记忆设备中的双电阻切换模式,使大脑功能能够灵活模拟. 这些设备为低功耗,高密度的神经形态计算提供了途径,并避免了隐形路径电流.

科学领域:

材料科学材料科学材料科学
神经科学是一个神经科学.
电气工程电气工程

背景情况:

记忆器件对于模拟神经元和突触等大脑功能至关重要.
在单个设备中整合非挥发性和挥发性切换模式简化了神经形态架构.
记忆网络中的基于晶体管的选择器增加了功耗,降低了集成密度.

研究的目的:

在VO2/LSMO双层记忆器件中报告双电阻开关 (RS) 模式.
为了证明创建低功耗,高密度的记忆性尖端神经网络的潜力.
探索这些设备在神经形态计算和memristive交叉条数组中的应用.

主要方法:

制造VO2/La0.7Sr0.3MnO3 (LSMO) 双层记忆器件的设备.
电气表征用于识别和区分非挥发性和挥发性电阻开关机制.
分析氧气空缺和金属绝缘体过渡 (MIT) 在控制RS模式中的作用.

主要成果:

在单个设备中证明了非挥发性 (由氧空位驱动) 和挥发性 (由VO2 MIT驱动) RS模式的共存.
在两个RS模式之间实现了电转换,实现了1选择器-1电阻 (1S1R) 电池功能.
确认了两个RS模式的稳定性和可重复性,可通过接口和相位过渡属性进行重新配置.

结论:

VO2/LSMO双层记忆器具有双 RS 模式,适合高级神经形态应用.
1S1R单元格功能解决了记忆性横条数组中的潜入路径当前问题.
这些发现为高效,高密度的记忆神经网络和神经形态计算系统铺平了道路.

关键词:

在VO2/LSMO异构结构中.双电阻开关双电阻开关金属绝缘器相位过渡的过程.神经形态计算是一种神经形态计算.可以重新配置的memristor.

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