HfOx/AlN3D

Juri Kim1, Subaek Lee1, Yeongkyo Seo2

  • 1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.

概括

这项研究介绍了一种用于神经形态计算的新型双层3D垂直电阻随机访问存储器. 记忆器在模式识别方面表现出高精度,展示了它对先进AI应用的潜力.

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