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Updated: Jun 28, 2025

Micropunching Lithography for Generating Micro- and Submicron-patterns on Polymer Substrates
09:24

Micropunching Lithography for Generating Micro- and Submicron-patterns on Polymer Substrates

Published on: July 2, 2012

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不同类型的Te/PdSe2 范德瓦尔斯异质连接用于自动供电的宽带和极化敏感光检测

Pu Wang1,2, Zhao Li3, Xue Xia2

  • 1Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China.

Small (Weinheim an der Bergstrasse, Germany)
|April 9, 2024
PubMed
概括

工程Te/PdSe2异构结构显著提高宽带光探测器的偏振灵敏度. 这一进步是下一代传感,成像和通信技术的关键.

关键词:
这是一种异型异型的异型异型.宽带宽带是什么意思摄影探测器是一种光检测器.极化敏感的 极化敏感的自动驱动的自动驱动汽车

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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations13:56

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

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Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons07:39

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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