多功能纳米级三终端记忆开关,通过网关启用
Mila Lewerenz1, Elias Passerini1, Bojun Cheng2
1TH Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland.
ACS nano
|April 9, 2024
概括
这项研究引入了一种新型的三终端记忆器,具有可调节电阻的门接触. 该设备显示出高耐久性和97%的成功率,使其适合物联网和神经形态计算.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 纳米技术纳米技术
背景情况:
- 由于其非挥发性和可扩展性,memristors对于下一代计算至关重要.
- 现有的memristor设计往往缺乏对其开关特性进行细粒度控制.
- 门接触的集成为先进的memristor功能提供了一个新的途径.
研究的目的:
- 介绍和描述一款具有门接触的新型三终端memristor.
- 为了证明设备的可调节电阻和切换行为.
- 为了评估设备在计算中的潜在应用的性能.
主要方法:
- 一个三终端的memristor的制造,其尺寸为70 nm × 10 nm × 6 nm.
- 在I-V模式 (调节设置电压) 和脉冲模式 (诱导电阻变化) 中对设备的表征.
- 在1kHz运行下使用260万电压脉冲进行耐久性测试,并评估对伪随机位序列的响应.
主要成果:
- 记忆器具有超小的足迹 (0.07μm2) 和双重操作模式的门接触.
- 门电压调整在I-V模式下将设置电压转移了69%.
- 该设备展示了两个不同的阻力状态,高耐力 (经过260万次脉冲测试),开眼图,以及对伪随机位序的响应97%的成功率.
结论:
- 开发的三终端记忆器通过门接触提供了对阻力状态的精确控制.
- 该设备具有出色的耐久性和可靠的数据传输能力.
- 这种memristor技术对物联网 (IoT) 和神经形态计算架构中的应用具有重大前景.
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