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单层CVD的工程表面状态密度增长为2D MoS2以提高光探测器性能

Gowtham Polumati¹, Chandra Sekhar Reddy Kolli¹, Andres de Luna Bugallo²

¹Department of Electrical and Electronics Engineering, BITS Pilani, Hyderabad Campus, Hyderabad, India.

|April 10, 2024

概括

兴奋剂单层二硫化物 (MoS2) 光探测器通过增加表面状态密度 (Nss) 来显著提高光响应性. 这种兴奋剂还提高了反应时间,使MoS2成为先进光电子技术的有希望的材料.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

单层二硫化物 (MoS2) 是用于光电子应用的有希望的二维材料.
表面状态密度 (Nss) 显著影响基于MoS2的光探测器的性能.
了解对Nss的兴奋剂影响对于优化光探测器特性至关重要.

研究的目的:

为了研究兴奋剂对单层MoS2.2.的表面状态密度 (Nss) 的影响.
分析兴奋剂如何影响MoS2光探测器的响应能力和响应时间.
为了建立Nss,陷状态和光探测器性能之间的相关性.

主要方法:

用对单层MoS2进行实验性兴奋剂.
使用实验测量对表面状态密度 (Nss) 的表征.
测量摄影探测器响应能力和响应时间的评价,在使用兴奋剂之前和之后.
数学建模以支持对光电增益和陷水平的实验发现.
取决于温度的测量以验证表面状态和响应能力之间的关系.

主要成果:

兴奋剂显著增加了单层MoS2中的Nss,从4.2 x 10^12增加到1.63 x 10^13状态/m^2/eV.
光敏度从65.12 A/W (未使用剂) 增加到606.3 A/W (使用剂).
响应时间从0.85秒 (无兴奋剂) 提高到0.35秒 (兴奋剂).
实验和理论结果证实,更高的陷密度会导致光电增加.
温度变化证实,表面状态下降导致响应能力下降.

结论:

兴奋剂是一种有效的策略,可以提高单层MoS2光探测器的性能.
由于兴奋剂增加的表面状态密度 (Nss) 与更高的光响应度和更快的响应时间直接相关.
这些发现为设计高性能二维材料 fotodetectors 提供了宝贵的见解.

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