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通过环振荡器生成和存储随机电压值,环振荡器包括反场效应晶体管
Jaemin Son1, Juhee Jeon1, Kyoungah Cho1
1Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
Nanomaterials (Basel, Switzerland)
|April 12, 2024
概括
本研究展示了带有反场效应晶体管 (FBFET) 的环振荡器如何产生和存储随机电压值. 这项技术提升了真正的随机数发生器的能力.
科学领域:
- 电子 电子 电子 电子 电子 电子 电子
- 材料科学 材料科学 材料科学
- 计算机科学 计算机科学
背景情况:
- 传统的随机数生成方法在速度和物理实现方面存在局限性.
- 集成内存和逻辑函数对于高效的计算至关重要.
研究的目的:
- 展示一种用于生成和存储随机电压值的新方法.
- 探索反场效应晶体管 (FBFET) 在物理函数中的应用.
主要方法:
- 使用由FBFET组成的环振荡器电路.
- 利用FBFET的逻辑内存功能来提取模拟电压输出.
- 分析生成的随机变量的概率分布和存储稳定性.
主要成果:
- 环振荡器为二进制输出产生了统一的概率分布 (逻辑0的51.6%,逻辑1的48.4%).
- 产生的模拟电压,代表二进制随机变量,稳定存储超过5000秒.
- 证明了从振荡周期中提取连续输出电压.
结论:
- 基于FBFET的环振荡器有效地产生和存储随机电压值.
- 这种方法显示出在先进的物理函数中应用的巨大潜力.
- 这项技术对开发下一代真正的随机数生成器充满希望.
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