一个26-28 GHz,双相,低噪声放大器用于第五代无线电频率和毫米波应用
Aymen Ben Hammadi1, Mohamed Aziz Doukkali2, Philippe Descamps2
1ASYGN (Analog System Design), 37 Rue Diderot Bâtiment B, 38000 Grenoble, France.
Sensors (Basel, Switzerland)
|April 13, 2024
概括
本研究介绍了一种用于5G毫米波频率的高增益低噪声放大器 (LNA). 这种新的设计通过使用cascode拓和先进的SiGe BiCMOS技术实现了优异的增益和低噪声数据.
科学领域:
- 电气工程 电气工程
- 微波工程 微波工程
- 半导体设备物理 半导体设备物理
背景情况:
- 5G技术需要用于毫米波 (mm-wave) 频率的高性能组件.
- 低噪音放大器 (LNA) 对敏感的接收器前端至关重要.
- 传统的LNA设计往往面临着增益,噪声数字和功耗之间的权衡.
研究的目的:
- 为5G毫米波应用提供一种新的高增益低噪音放大器 (LNA) 设计.
- 展示一种设计技术,可以减轻米勒效应以提高性能.
- 使用低压供应实现同时高增益和低噪声数据.
主要方法:
- 该LNA设计结合了两个传统的cascode阶段:共同的基础 (CB) 和共同的发射器 (CS).
- 拓分析和设计使用0.25微米SiGe BiCMOS工艺技术.
- 使用低压供应和低电流密度晶体管来优化性能.
主要成果:
- 设计的LNA在26 GHz实现了26dB的小信号增益.
- 收益误差在26-28 GHz频段保持在1dB以下.
- 在整个频段中,平均噪声 (NF) 值为3.84dB.
- 该电路以每阶段15mA电流消耗和3.3V电源运行.
结论:
- 拟议的两级cascode LNA有效地实现了5G毫米波频段的高增益和低噪声数据.
- 设计方法成功地减少了米勒效应,使低电压和电流的高效运行成为可能.
- SiGe BiCMOS实现为下一代无线通信系统提供了可行的解决方案.
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