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含有 Tert-Butyl 的低电介质聚胺薄膜的制备和性能

Xin Li¹, Rongrong Zheng¹, Cheng Wang^2,3

¹School of Petrochemical Engineering, Shenyang University of Technology, Liaoyang 111003, China.

|April 13, 2024

概括

新的三乙烯聚胺 (PI) 薄膜被合成用于微电子. 这些PI薄膜表现出增强的自由体积和减少的链相互作用,导致低介电常数和出色的热和机械性能.

科学领域:

材料科学材料科学材料科学
聚合物化学聚合物化学
微电子学微电子学

背景情况:

高性能聚胺 (PI) 薄膜对于微电子非常重要.
了解PI中的结构-电流性财产关系是具有挑战性的,但有意义的.

研究的目的:

设计具有改进介电性能的新型 tert-butyl polyimide (PI) 薄膜.
为了研究三-基分支对PI结构和介电性能的影响.

主要方法:

使用低温聚合策略合成四种新型的三丁PI薄膜 (PI-1至PI-4).
使用特定的四碳基二水化物和4,4'-米诺-3,5-二丁二乙烯以太作为单体.

主要成果:

引入三聚基分支增强了自由体积,并减少了PI中的链际相互作用.
这种结构修改导致了极低的介电常数.
优化的PI-4表现出卓越的性能:高玻璃过渡温度 (454°C),抗拉强度 (117.40 MPa) 和疏水性 (80.16°),介电常数为2.90.

结论:

特特-丁功能化是开发低介电常数聚胺的有效策略.
合成的PI薄膜具有出色的综合性质,在微电子应用中性能优于许多现有材料.

关键词:

电影电影电影电影电影低电解压的低电解压器微电子行业微电子行业聚化物是一种聚化物.这是一种三-丁基.

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