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相关概念视频

Photoluminescence: Fluorescence and Phosphorescence01:23

Photoluminescence: Fluorescence and Phosphorescence

5.6K
Photoluminescence is a process where a molecule absorbs light energy and re-emits it in the form of light. This phenomenon occurs when a substance absorbs photons, promoting its electrons to higher energy level excited states, followed by a relaxation process in which the electrons return to their original ground state energy levels and emit light. Photoluminescence is widely observed in various materials, including semiconductors, and organic and inorganic compounds.
A pair of electrons in a...
5.6K
Photoluminescence: Applications01:14

Photoluminescence: Applications

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Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...
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Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.8K
P-N junction01:11

P-N junction

1.7K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.7K

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相关实验视频

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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
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基于GaN微缩的量子光生成,朝着完全在芯片上源的方向发展.

Hong Zeng1,2, Zhao-Qin He3, Yun-Ru Fan1,2

  • 1Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China.

Physical review letters
|April 13, 2024
PubMed
概括

化 (GaN) 微环产生纠的光子对用于量子信息处理. 这一突破使得芯片上的量子光源能够用于可扩展的量子电路.

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科学领域:

  • 量子光学就是一个量子光学.
  • 材料科学是一种材料科学.
  • 综合光子学 综合光子学

背景情况:

  • 集成的量子光源对于可扩展的量子信息处理至关重要.
  • 开发用于芯片内量子功能的新材料平台仍然是一个关键的挑战.

研究的目的:

  • 为了展示一种基于化 (GaN) 微的量子光源,用于芯片内集成.
  • 探索GaN在单体量子光子电路中的潜力.

主要方法:

  • 制造具有330 GHz自由光谱范围和接近零的广泛异常分散区域的GaN微环.
  • 产生能量时间纠的光子对.
  • 通过两光子干扰可见性的光子对纠的表征.
  • 预告单光子生成和测量g_{H}^{(2)}(0) 的配置.

主要成果:

  • 在电信C频段中演示了GaN微波量子光生成.
  • 对于纠的光子对,实现了95.5±6.5%的原始两光子干扰可见性.
  • 生成的预示单个光子与g_{H}^{(2)}(0) = 0.045±0.001.

结论:

  • GaN微环为集成量子光源提供了一个有前途的平台.
  • 结果为芯片规模量子光子电路铺平了道路.
  • 这项工作推动了单体量子技术的发展.