可调节的丰富的山谷霍尔效应和性旋转山谷锁定在Janus单层VCGeN4中
Kang Jia1,2, Xiao-Jing Dong2, Sheng-Shi Li1
1School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China. ss_zhangchw@ujn.edu.cn.
Nanoscale
|April 15, 2024
概括
简氏单层VCGeN4表现出可调节的山谷霍尔效应,由应变和电场驱动. 这种铁磁半导体显示自发的谷极化和性旋谷锁定,为旋电和拓研究提供了一个平台.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子力学就是量子力学.
背景情况:
- 二维 (2D) 系统提供独特的电子特性.
- 霍尔谷效应 (VHE) 是凝聚物质物理学中的一个关键现象.
- 铁磁材料中的可调节VHE对自旋电子有很大的兴趣.
研究的目的:
- 在Janus单层VCGeN4.4中研究可调节谷霍尔效应.
- 探索应变,电场和磁化对VHE的影响.
- 建立VCGeN4作为一个平台,用于自旋和拓应用.
主要方法:
- 使用了第一原则计算.
- 分析电子带结构和对称性特性.
- 模拟外部刺激,如应变,电场和磁场.
主要成果:
- 詹纳斯单层VCGeN4表现出具有山谷特征的内在铁磁半导体性质.
- 自发的山谷极化是由于反转和时间逆转对称性被打破而产生的.
- 应变会诱导一个谷非平衡量子异常的霍尔效应,可以通过电场调节.
- 在磁化逆转时观察到螺旋旋谷锁定.
结论:
- VCGeN4展示了一个可调和丰富的山谷霍尔效应.
- 这种材料可以作为一个有前途的平台来研究旋转,山谷和拓性质.
- 外部场可以有效地控制VCGeN4.4的电子和磁特性.
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